DAI Honglian, WANG Siqing, ZHA Congji, YAN Yuhua
（Wuhan University of Technology）
Abstract: In this paperthe technology process of preparation recrystallization silicon carbide（SiC） powder was studied by carbon thermal reduction method．The growth mechanism of recrystallizationα－SiC was mainly scussedmeanwhilethe stable range of various phase of SiC and the effect of technological parameter on appearance and rate of production of SiC were probed into．
Keywords: carbon thermal reduction methodrecrystallizationSiC powder