LU Mengchen ¹, WANG Minghui ², CHEN Ting ³, GU Shijia ¹, ZhOU Beiying ¹, LUO Wei ¹, WANG Lianjun ¹
（1.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai, 201620,
China；2.Analysis and Testing Center. Donghua University, Shanghai, 201620, China；3. Jingdezhen ceramics University，
Jingdezhen 333403, Jiangxi, China)

Abstract: Due to the unique structure of quantum dots, quantum dots show good photoelectric properties. With the concept of sustainable development spreading widely and deeply in people's opinion, the toxicity of quantum dots has attracted more and more attentions. As a low toxicity and low pollution semiconductor material, ZnS is a hot research topic. However, due to its wide band gap, more photons need to be absorbed during the electron transition, so it is difficult to produce stable and good luminescence performance. After doping Cu²⁺the luminescence efficiency of ZnS quantum dots is improved, the photoelectric properties are more stable, and the advantages of low toxicity and low pollution are maintained. In this paper, ZnS quantum dots and Cu²⁺doped ZnS quantum dots were prepared by hot injection method,and the XRD characterization, TEM characterization and fluorescence spectra analysis were carried out. The luminescence intensity of ZnS quantum dots with hexagonal wurtzite structure is weak, and has two emission peaks at 470 nm 540 nm, which correspond to the intrinsic luminescence peak and the surface defect peak. The luminescent properties of the quantum dots doped withCu²⁺ were remarkably improved.Therefore, we investigated the effect of S content, Cu²⁺ content and the reaction time after the addition of sulfur ((NH₄)₂S) on the luminescent properties of ZnS:Cu quantum dots.

Key words: ZnS quantum dots, doped ions, photoluminescence, hot injection method