WANG Fang, LI Yangliang, SONG Jieguang, BAI Xiaobo

(Jiujiang Key Laboratory of Green Remanufacturing, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang Jiangxi 332005, China)

Abstract:As a lead-free environment-friendly material, BaTi205 with excellent dielectric and ferroelectric properties has attracted much attention due to its potential applications in devices of high density dynamic random access memories (DRAM) and non-volatile ferroelectric random access memories (FRAM). The effects of the sintering process (sintering temperature and sintering pressure) on structure and dielectric properties were studied in this paper. The results showed: sintering temperature and sintering pressure can improve the density and grain size. The grain size tended to be uniform and the porosity decreased when the sintering temperature increased. The relative density increased gradually with the sintering pressure increased, which would be the maximum (86.70%) at 50MPa. It can basically meet the requirements of targets for films.

Key words:BaTi205; FRAM; sintering process; membrane target