Artifical Neural Networks and Genetic Algorithm Used to Ptimize Progress Parameters of Si3n4film Prepared by Lpcvd-Journal Ceramics

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Artifical Neural Networks and Genetic Algorithm Used to Ptimize Progress Parameters of Si3n4film Prepared by Lpcvd

ZHANG Qinjian, WU Chunli, LI Min, ZHANG Qinhe, QIN Yong, BI Jinzi, ZHANG Jianhua

（Shangdong University∗Tongji University）

Abstract: The relationship of Si₃N₄film microhardness and process parameters of Laser－Plasma aided Chemical Vapor Deposit （LPCVD） was established by using artificial neural networks．The optimum parameters were optimized with genetic algorithm．

Keywords: LPCVDSi₃N₄ filmartificial neutral networksgenetic algorithm

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