XU Jing ¹, FAN Suhua ², HE Bo ³, REN Yanxia ¹, ZHANG Fengqing ²

(1. Department of Materials Science and Engineering ，Jinan University， 250022; 2. School of Materials Science and Engineering，Shandong Institute of Architecture and Engineering, 250101; 3. Institute of Advanced Materials for Photo- Electronics ，Kunming Univers ity of Science and Technology, 650051)

Abstract: CaBi₄Ti₄O₁₅ bismuth- based layered lead- free dielectric ceramics doped with Na⁺¹ were prepared by the solid- synthes is . The effects of the amount of doping and sintering temperature on the CBT ceramics ' crys tallization，micros   tructure and dielectric properties have beens tudied by XRD，SEM and LCR. The results indicated that the Na_2xCa_{1- x}Bi₄Ti₄O₁₅ (x=8mol%) ceramics which have good properties can be obtained by pre - sintering at 860℃ for 3 hours and   sintering at 1150℃ for 1 hour.

Keywords: solid reaction, dielectric properties , CaBi₄Ti₄O₁₅ ceramics doped with Na⁺¹