QU Minghao, HU Yuehui ,FENG Jinghua ,XIE Yaojiang ,WANG Lifu

（Jingdezhen Ceramic Institute, Jingdezhen 333001）

Abstract: The amorphous Ta₂O₅ thin films were deposited by magnetron sputtering at low substrate temperature. By chemical thermal annealing at 750℃ in oxygen atmosphere, crystallized Ta₂O₅thin films with relative dielectric constant of 34.3 and leakage current density of lower than 10 ^-7A/cm² were obtained. In order to eliminate the influence of SiO₂ dielectric layer introduced at high temperature annealing on the measurement of capacity, capacitors with the metal -insulator -metal structure were fabricated using Ta₂O₅ thin films with different thickness as dielectric layer. The limit value of capacity was obtained based on Sigmoidal fitting of measured data, from which dielectric constant can be calculated.

Keywords: Ta₂O₅ thin films, dielectric constant, leakage current density