HONG Yan , LI Yueming , SHEN Zongyang , WANG Zhumei , LIAO Runhua , LI Runrun , LIU Hu
(School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Key Laboratory of Advanced Ceramics of Jiangxi Province, Jingdezhen Jiangxi 333403, China)
Abstract: Leadless CaBi4Ti(1-x)NbxO15 (x = 0.00-0.05, CBT-N) bismuth-layered structural piezoelectric ceramics was prepared by solid state sintering process. Effects of Nb5+ doping on the piezoelectric and dielectric properties of CBT ceramics were studied. Results showed: the doping of Nb5+ improved the sintering properties and density of CBT ceramics; the addition of Nb2O5 lowered the dielectric loss and improved the piezoelectric and dielectric properties. When the doping amount x=0.04,the CaBi4Ti0.96Nb0.04O15 bismuth-layered structural ceramics as-prepared exhibited excellent piezoelectric properties:d33=14pC/N,Qm=3086, εr=212, tanδ=0.0041, kt /kp=1.681.
Key words: bismuth-layered structure; dielectric properties; piezoelectric properties; CaBi4Ti4O15