ZHANG Zhipeng, SHEN Zongyang, QIN Chen, SONG Fusheng, LUO Wenqin, WANG Zhumei, LI Yueming
(School of Materials Science and Engineering, Jingdezhen Ceramic Institute; China National Light Industry Key Laboratory of Functional Ceramic Materials; Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province, Jingdezhen 333403, Jiangxi, China)
Abstract: WO3 modified bismuth layer-structured Bi4Ti3O12(Bi4Ti3-xWxO12, 0.00≤x≤0.16, BITW) ferroelectric ceramics were synthesized by using asolid-state reaction method. The effect of W6+ modification on microstructure and electrical properties of the Bi4Ti3O12(BIT) ceramics was studied. It was found that the grains of the BITW ceramics were refined and the microstructure was homogenized at the optimal doping concentration of W6+. As a consequence, both the conductivity and dielectric loss of the ceramics were reduced, while the piezoelectric and electromechanical properties were enhanced, due to the improved densification behavior of the materials. When the WO3 doping concentration was x=0.14, the ceramics exhibited optimum electrical properties, with d33=16 pC/N, kp=8.1%, Qm=1942, εr=160(at 100 kHz), tanδ=0.016(at 100 kHz), TC=632 ℃ and ρ= 9.4×107 Ω•cm at 500 ℃, indicating that the BITW ceramics could have potential in high temperature applications.
Key words: bismuth piezoelectric ceramics; Bi4Ti3O12; piezoelectric properties; dielectric properties; thermal stability