LIU Fang, JIANG Xiangping, CHEN Chao, HUANG Xiaokun, NIE Xin, HU Hao, SU Chunyang, CHEN Yunjing, ZHUANG Junsheng
(Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)
Abstract: Ta5+-doped SrBi8Ti7-xTaxO27 (SBT-BIT-xTa5+, 0≤x≤0.10) inter-grown bismuth layer-structured ceramics were prepared by using the conventional solid-state method. The effect of Ta5+-doping on structural and electrical properties of the ceramics were studied. All the ceramics possessed a single inter-grown bismuth layer-structure with m = 3.5. At the optimal doping concentration of Ta5+, both the grain size and dielectric loss of the samples were reduced, while their piezoelectric constant and remanent polarization were increased. Specifically, the piezoelectric constant reached the maximum value of d33 = 17 pC/N for the sample with x = 0.04, whereas the maximum remanent polarization was 2Pr = 3.0 μC/cm2 in the sample with x = 0.06. Moreover, the SBT-BIT-xTa5+ ceramics possessed excellent piezoelectric stability, indicating that the materials are promising candidates for high-temperature applications.
Key words: inter-growth bismuth layer-structure; piezoelectric ceramics; oxygen vacancy; electrical properties