LI Chenran 1, XIE Zhipeng 1,2, ZHAO Lin 1
(1. School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China; 2. State Key Lab of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China)
Abstract: Silicon carbide (SiC) ceramic materials have excellent high-temperature mechanical properties, high thermal properties and chemical stability. They have been widely used in various industrial fields, such as chemical, metallurgy, machinery, energy and environmental protection. They also found applications in modern scientific and optoelectronic fields, such as semiconductors and electronics. Starting from the structural characteristics of SiC crystals and sintering characteristics of powder, this paper is aimed to summarize the research progress of important sintering technologies for SiC ceramics, including both the widely used methods (such as reactive bonding sintering, pressureless sintering, hot-pressing sintering, hot isostatic sintering) and the recently developed methods (such as spark plasma sintering and oscillating pressure sintering). The sintering characteristics, sintering mechanism, materials and productivity of these sintering technologies are emphatically described. Finally, the development trend of SiC ceramics is prospected.
Key words: silicon carbide; sintering technology; sintering mechanism; product performance