WANG Yanxiang, LI Ji, SUN Jian, GAO Yangyang, LI Jiaka, ZHAO Xueguo
(School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)

Abstract: CdS/CdSe co-sensitized Quantum Dot-sensitized Solar Cells (QDSSCs) were prepared. Titanium oxide (TiO₂) mesoporous films were used as photoanodes. CdS quantum dot (QDs) was deposited by the successive ionic layer adsorption and reaction (SILAR) method on the surface of TiO₂ mesoporous film, and CdSe QDs was deposited on the TiO2/CdS film through a chemical bath deposition (CBD) method. The influence of In doping amount and methods on the photoelectric performance of CdS/CdSe co-sensitized QDSSCs were investigated.When In was doped into the CdS and doping amount was 9%, the QDSSCs had the optimal performance. The open circuit voltage (Voc),short cruciut current density (Jsc), fill factor (FF) and photoelectric conversion efficient (PCE) of the QDSSCs were 0.58 V, 14.53 mA/cm², 0.58 and 4.91 %, respectively. Compared to the no doping device, the PCE of QDSSCs with 9% In doping was increased by 131%.

Key words: Quantum dot-sensitized solar cells, CdS/CdSe co-sensitized, In doping, photoelectric performance