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Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method

CHANG Jiaxing, LIU Rongzheng, LIU Malin, SHAO Youlin, LIU Bing
(Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology,
Tsinghua University, Beijing 100084, China)

Abstract: Silicon carbide (SiC) nanowires have been successfully prepared by the fluidized bed chemical vapor deposition (FBCVD)method. Methyltrichlorosilane (MTS) was used as the precursor and ferrocene was used as the catalyst. The crystal structure and microstructure of the as obtained products were investigated by XRD, SEM and TEM. Results showed that for the samples synthesized at 1200 °C, the products were cubic β-SiC with the diameter of 50-100 nm and length of longer than 100μm, which showed a large aspect ratio. The nanowires showed single crystal feature with a growth direction of (111) and many stacking faults were observed. Some novel morphologies like bamboo-shaped and block-assembled nanowires were also obtained by increasing the preparation temperatures, and the formation of which was attributed to the complex deposition conditions. The SiC nanowires can be continuously produced by the FB-CVD method and a yield of 2 g/h can be realized in the reactor with a diameter of 50 cm. This method will show promising perspective by further optimization and scale-up in the future.

Key words: SiC; nanowi res; fluidized bed chemical vapor deposition; macro preparation

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