LIU Shaopeng, CAI Hongzhong, WEI Yan, QI Xiaohong, HU Changyi
(State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals,Kunming Institute of Precious Metals, Kunming 650106, Yunnan, China)

Abstract: Due to its high dielectric constant, wide band gap, low leakage current, large conduction band offset and excellent lattice match with Si, HfO₂ obtained to have a widespread application in the field of semiconductor industry; also, with it's high melting point, low thermal conductivity and evaporation rate, excellent thermal compatibility, thermal barrier and thermal diffusion barrier properties, HfO₂ tends to be the most promising candidate for coating materials with high temperature oxidation resistance. This paper describes several common preparation methods and corresponding features of HfO₂ films.

Key words: HfO₂; thin film; preparation methods; crystal structure; property