XU Chengzhang, HU Yuehui, CHEN Yichuan, HU Keyan, FAN Jianbin, GUO Shengli
(Department of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)

Abstract: Gallium-doped zinc oxide transparent conducting films were deposited on flexible substrate polyethylene terephthalate by radio frequency (RF) magnetron sputtering at room temperature. The influence of sputtering power on the structural properties, internal stress,optical and electrical properties of as-deposited films were researched, and some relative tests were conducted on the samples. The XRD test shows that all the deposited films were polycrystalline with hexagonal structure and a strong preferred c-axis orientation, However, the diffraction angle has an obvious deviation, indicating larger internal stress in films. The SEM test shows that crystalline grains have great uniformity and density; with the increase of sputtering power, crystalline grain size changes regularly. The average transmittance of films is about 85%, and the lowest electrical resistivity is 7.1×10^-3 Ω·cm.

Key words: ZnO films; polyethylene terephthalate (PET); sputtering power; internal stress