GONG Chaoyang, LI Quan, CHENG Xuan, ZHANG Ying
(Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, Fujian, China;
Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, Fujian, China)
Abstract: Europium doped silicon based oxynitride phosphor was prepared by polymer-derived method. Thermal analysis results confirm the polymerization temperature of polycarbosilane with Eu(AcAc)3; the nitridation temperature was confirmed by the analysis of weight loss and carbon content; the final sintering temperature was confirmed by the XRD results. The Eu doped silicon based oxynitride phosphor was successfully prepared by this method. The structure and photoluminescence of this phosphor was analyzed by XRD and fluorescence spectra.The results show that the excitation peak was located at 375 nm, the emission peak was located at 550 nm, and the crystal structure was the mixture of α-Si3N4 and β- Si3N4.
Key words: oxynitride phosphor, polymer-derived method, polycarbosilane