Yu Feng, Lu Jianru, Chen Jing, Cheng Lei, Wan Ping, Yang Lisha

(Jingdezhen Ceramic University, Jingdezhen 333403, Jiangxi, China)

Extended abstract:

[Significance] Silicon carbide (SiC) ceramics are among the most strategically important advanced materials of the 21st century. Their unique combination of a wide bandgap (approximately 3.26 eV for 4H-SiC), high thermal conductivity (up to 490 W·m⁻¹·K⁻¹), excellent chemical inertness and exceptional mechanical strength makes them indispensable for high-temperature, high-frequency and high-power electronic devices, as well as for aerospace composites, environmental filtration systems and corrosive chemical processing equipment. As global industries undergo a profound transformation driven by the rapid adoption of electric vehicles, the construction of 5G/6G communication infrastructure and the transition to renewable energy sources, SiC ceramics have emerged as a key enabler of energy efficiency and system miniaturization. Consequently, mastering SiC-related intellectual property has become a matter of national technological competitiveness. Understanding the global patent landscape of SiC ceramics is therefore essential for identifying long-term technological trends, competitive dynamics among major economies and potential areas for breakthrough innovation. Based on a systematic search of the IncoPat patent database covering the period from 1960 to 2025, this study was aimed to provide a comparative analysis of the patent situation of SiC ceramics worldwide and specifically in China. Furthermore, it is attempted to offer an in-depth investigation of China's patent technology development in four critical application domains: semiconductor devices, composite materials, environmental protection and chemical engineering. The findings are intended to inform evidence-based policymaking, guide corporate R&D strategies and prioritize future research directions for achieving technological self-reliance in this vital field.

[Progress] The global development of SiC ceramic technology has undergone three distinct phases: an embryonic period from 1960 to 1985 with sporadic foundational patents, a gradual growth phase from 1985 to 2005 driven by advances in power electronics and an explosive expansion period from 2006 to 2025. It is demonstrated that global SiC ceramic technology has now entered a rapid expansion phase, with the annual number of patent filings increasing exponentially. A well-defined technical system has emerged, characterized by semiconductor devices (IPC classification H01L) and crystal growth (C₃₀B) as its dual technological cores. These two areas together account for a majority of all SiC-related patents, reflecting the central role of SiC in next-generation power semiconductors and the critical importance of high-quality single-crystal growth techniques.

Regarding geographical distribution, Japan, China and the United States constitute the first echelon of global patents, collectively holding over 70% of all SiC ceramic patents worldwide. A distinctly differentiated competitive pattern has taken shape. Japan dominates the upstream segment, particularly in high-purity raw material synthesis, defect-controlled crystal growth equipment and precision processing technologies. China exhibits strong performance in the midstream segment, including substrate slicing and polishing, epitaxial wafer manufacturing and device packaging. Europe and the United States excel in system-level integration, specialized application know-how and foundational material science patents. From the perspective of China's own development, the number of SiC ceramic patents has grown remarkably rapidly, with the total count jumping to the first position globally by 2025. An innovation model has formed, in which enterprises serve as the primary innovation entities, while universities and research institutes actively participate in collaborative development. Leading Chinese companies have built comprehensive patent portfolios in SiC power device fabrication, composite material processing and environmental applications, such as diesel particulate filters and high-temperature flue gas treatment. However, despite these achievements, a detailed comparison with foreign counterparts reveals persistent shortcomings. Firstly, the number of high-value patents, those with broad claims, frequent citations and successful licensing or litigation, remains limited, as compared with Japan and the United States. Secondly, the coverage of the industrial value chain is uneven, with relative weakness in upstream ultra-high-purity raw material preparation. Thirdly, regional technology development is unbalanced, with most patents concentrated in Jiangsu, Beijing, Shanghai and Zhejiang. Lastly, the synergy of industry-university-research partnerships, though improving, still suffers from inefficient technology transfer and divergent incentive structures.

[Conclusions and prospects] It is concluded that, while China has achieved a commanding quantitative lead in SiC ceramic patents, substantial gaps remain in patent quality, upstream chain integration, regional balance and collaborative innovation efficiency. The strategic transformation from "technology following" to "indigenous leadership" requires deliberate policy intervention and coordinated industrial action. Based on the above analysis, four countermeasures are proposed. Firstly, quality of the patents has been increased, by refining examination standards, establishing a national high-value patent evaluation system and providing targeted support for core technologies, such as low-defect crystal growth and novel device architectures. Secondly, the whole-chain technology layout is optimized optimized, by intensifying upstream research on precursor synthesis and next-generation growth methods and encouraging vertical integration through strategic alliances between raw material suppliers, equipment manufacturers and device makers. Thirdly, regional collaborative innovation is fostered through cross-provincial consortia, patent sharing mechanisms and the establishment of specialized SiC industrial parks in less-developed regions with appropriate resource endowments. Fourthly, the industry-university-research integration is strengthened, by reforming intellectual property ownership policies, establishing professional technology transfer offices and creating long-term funding mechanisms for joint research centers. By implementing these measures, it is realistically possible to achieve indigenous technological leadership in SiC ceramics by the mid-2030s, thereby contributing to global innovation while securing its own economic and strategic interests.

Key words: silicon carbide ceramics; IncoPat patent database; patent analysis; development trends