FU Weining, JIANG Xupeng, YIN Rong, LONG Shenfeng, WEI Tingting, LAN Zheng, WANG Qi, GUAN Yingwen, XU Huarui, ZHANG Xiuyun, ZHANG Jian, ZHU Guisheng
(Engineering Research Center of Electronic and Information Materials and Devices, Ministry of Education, Guangxi Key Laboratory of Structure-activity Relationship of Electronic and Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Science and Technology, Guilin 541004, Guangxi, China)
Abstract: High density aluminum-doped zinc oxide (AZO) ceramics were prepared by using two-step cold sintering process (TS-CSP) at 300 ℃. Phase composition, relative density, microstructure and electrical properties of the AZO ceramics were characterized by using XRD, density tester, SEM and four-probe testing system. It is found that the doping of Al has an strong effect on structure and properties of the AZO ceramics. When the doping concentration of Al2O3 is 2.0 wt.%, the AZO ceramics exhibited electrical properties. After annealing treatment, the AZO ceramics had a relative density of as high as 99.46% and a resistivity of as low as 3.43 × 10−3 Ω·cm.
Key words: aluminum-doped zinc oxide; two-step cold sintering; resistivity; densification process