Charlie B Duke

WU JiuHong WU ZhiZhong

Abstract: This article summarizes the modern measurement methods of the original geometric structure of the semiconductor surface and interface, and discusses the relationship between the surface structure and chemical bonds of the compound semiconductor (110) surface with zinc blende structure. Taking the structure formed by aluminum deposition on the GaAs(110) surface as an example, it shows that when an active gold It belongs to the chemical process that occurs when it interacts with the surface of a compound semiconductor. Unlike aluminum, antimony forms a saturated monolayer structure on the GaAs(110) surface, and its geometric structure reflects the molecular beam epitaxy of the III-V materials The nature of surface chemical processes that occur during growth.