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Study on Photoelectric Performance of Organic Light Emitting Device

WANG  Yinglian 1 ZENG  Renfen 1 YE Junyao 2

(1. School of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403; 2. School of

Information Technology, Jingdezhen Ceramic Institute, Jingdezhen 333403)

Abstract:Organic light emitting devices (OLED) with the structure of ITO/TPD (30nm)/Alq3 (40nm)/ LiF/Al were fabricated by vapor thermal deposition. Alq3 was evaporated at different depositing velocity and the thickness of LiF was different.Photoelectric performance of OLED was observed as well. It showed that the OLED with Alq3 deposited at 0.2nm/s exhibited better performance and the turn-on voltage was 10V and the EL efficiency was 2.58cd/A. What's more, LiF as electron injection layer improved the photoelectric performance of OLED obviously. When the thickness of LiF was 2nm, the turn-on voltage was reduced to 7V, the luminance was increased 1345cd/m2 and the EL efficiency reached 4.4cd/A.

Keywords:organic light emitting device, Alq3, deposited velocity, LiF


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