MENG Xiangsen, SONG Chenlu, YU Jingsong, GE Manzhen, YANG Hui
(Zhejiang University)
Abstract: Silicon nitride thin films were prepared on plate glass substrate by atmospheric pressure chemical vapor deposition, whose deposition temperature decreased about 150 ℃ than usual APCVD method .We studied technique factors which affect preparation of Si3N4 films, such as temperature of substrate, ratio of gas, thermal treatment, and found out that high purified Si3N4deposited when the ratio of NH3/SiH4was 15/1 and the temperature was lower than 700 ℃.
Keywords: silicon nitride, thin film, APCVD