WANG Yanxiang, LI Jing, FAN Xueyun, YANG Zhisheng, HUANG Liqun, LI Jiake, SUN Jian
(Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)
Abstract: In this paper, Al3+ doped ZnO nanorods were prepared by chemical bath deposition method and were used in the DSSCs as the photoanode. The effect of the placement of FTO, concentration of growth solution and doping amount of Al3+ in seed layer on ZnO nanorods and DSSCs performance were investigated. The optimum preparation conditions were as following: the long side of FTO is placed in a vertical position in growth solution, and the concentration of growth solution and the doping amount of Al3+ in seed layer is 0.02 M and 9%, respectively. Under the optimum preparation conditions, the length of ZnO nanorods was 5 μm and the photoelectric conversion, the short circuit current, open circuit voltage and fill factor of the DSSC were 1.07%, 5.64 mA/cm2, 0.40 V and 0.47, respectively.
Key words: dye sensitized solar cell; ZnO nanorods; Al3+ doping; photoelectric conversion