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Preparation of ZrSiO4 Film via Non-Hydrolytic Sol-Gel Method at Low Temperature

CAO Fang 1, CHEN Ting 1, ZHA Jianrui 1, JIANG Weihui 1, 2, LIU Jianmin 1, WU Qian 1

(1. School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China; 2. National Engineering Research Center for Domestic & Building Ceramics, Jingdezhen 333001, Jiangxi, China)

Abstract: Zirconium silicate (ZrSiO4) film was prepared on n-type silicon substrate via nonhydrolytic sol-gel method. The phase composition and the microstructure of samples were studied. Meanwhile, the influences of heat treatment temperature, precursor concentration and coating times on the microstructure and the morphology of  ZrSiOfilm were investigated by means of XRD and FE-SEM. The results indicated that ZrSiOpowder was synthesized at 750 ℃ by introducing mineralizer LiF. However, the dense and smooth ZrSiOfilm was fabricated at 850 ℃ because the ionic migration of the two-dimensional film was more difficult than that of powder, which weakened the synthesis effect of zirconium silicate films correspondingly. At this temperature, the dense and smooth ZrSiOfilm was obtained with the precursor concentration of 0.7 mol • L-1 after coating twice. Increasing the heat treatment temperature, the ZrSiOgrain grew and recrystallized, which caused the decrease of film density.

Key words: zirconium silicate; film; non-hydrolytic sol-gel process; density

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