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Preparation of Nano Diamond@Silicon Carbide Composite Powder as Thermal Conductive Filler

GUAN Chunlong 1, QIN Yue 1,2, YI Jian 2, YU Jinhong 2, JIANG Nan 2

(1. School of Materials Sciences & Engineering, Henan University of Technology, Zhengzhou 450007, Henan, China; 2. Ningbo Institute of Materials Technology &Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, China)

Abstract: Through changing variables, such as methane concentration, hot filament power, hot filament distance and deposition time, a layer of nano diamond (ND) was coated on β-silicon carbide (β-SiC) powder by using hot filament chemical vapor deposition (HFCVD) technology. The prepared powderswere characterized by using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and thermogravimetric analysis. It was found that the structure of the ND@SiC composite powder is optimized with methane concentration of 5%, hot filament power of 4×1000 W (4 hot filaments and 1000W power each), hot filament distance of 8 mm and time of 2×3 h. The ND@SiC composite powder has a diamond content of 9.31 wt.%.
Key words: nanodiamond; silicon carbide; hot filament chemical vapor deposition; thermal conductive filler

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