ZENG Tao ¹, WANG Shuo ¹, FENG Shile ¹, SHI Wei ^{1, 2}, CHEN Yunxia ^{1, 2}, SU Xiaoli ¹
(1. Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China; 2. National Engineering Research Center for Domestic & Building Ceramics, Jingdezhen 333001, Jiangxi, China)

Abstract: Fluorine doped tin oxide film (FTO) was deposited by using spray pyrolysis strategy on glass substrate with monobutyltin trichloride, ultrapure water and methanol mixing solution as raw materials, and NH4F as a dopant. The effect of NH4F concentration in precursor solution on the photoelectric properties of the as-prepared conductive film was studied. The experimental results reveal that the best operating parameters are as follows: the temperature of the substrate is controlled at 500°C, the concentration of NH4F is fixed at 24 atom% in 0.5 M Sn precursor solution (Vmethanol : Vwater=2 : 1), and the spray procedure is conducted for 60 times. Finally, the sheet resistance (Rsh=11.3Ω/sqr), visible average-transmittance (Tave=77.80%) and figure of merit (ФTC = 7.2×10^-3 /Ω) of the conductive film can be realized, all of which are very close to those of the commercial FTO.
Key words: spray pyrolysis; FTO; sheet resistance; transmittance; figure of merit